VUB145-16NOXT 3~ Rectifier Standard Rectifier Module Brake Chopper VRRM = 1600 V VCES = 1200 V I DAV = 150 A I C25 = 180 A I FSM = 1100 A VCE(sat) = 1.7 V 3~ Rectifier Bridge + Brake Unit + NTC Part number VUB145-16NOXT Backside: isolated 24+25 29 30 45+46 NTC ~14+15 ~10+11 ~ 6+7 3 21+22 41 40 48+49 Features / Advantages: Applications: Package: E2-Pack Package with DCB ceramic Improved temperature and power cycling Planar passivated chips Very low forward voltage drop Very low leakage current NTC X2PT - 2nd generation Xtreme light Punch Through Rugged X2PT design results in: - short circuit rated for 10 sec. - very low gate charge - low EMI - square RBSOA @ 2x Ic Thin wafer technology combined with X2PT design results in a competitive low VCE(sat) and low thermal resistance 3~ Rectifier with brake unit for drive inverters Isolation Voltage: 3600 V~ Industry standard outline RoHS compliant Soldering pins for PCB mounting Height: 17 mm Base plate: Copper internally DCB isolated Advanced power cycling Phase Change Material available Terms and Conditions of Usage The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. (c) 2017 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20171128g VUB145-16NOXT Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C VRRM max. repetitive reverse blocking voltage TVJ = 25C 1600 IR reverse current VF forward voltage drop min. typ. VR = 1600 V TVJ = 25C 100 A TVJ = 150C 2 mA IF = TVJ = 25C 1.20 V 1.68 V 1.13 V IF = 50 A TVJ = 125 C 50 A I F = 150 A TC = 105 C bridge output current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current It CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. (c) 2017 IXYS all rights reserved 1.74 V T VJ = 150 C 150 A TVJ = 150 C 0.87 V 5.9 m d= for power loss calculation only Ptot V VR = 1600 V I F = 150 A I DAV max. Unit 1700 V 0.5 K/W K/W 0.10 TC = 25C 250 W t = 10 ms; (50 Hz), sine TVJ = 45C 1.10 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 1.19 kA t = 10 ms; (50 Hz), sine TVJ = 150 C 935 A t = 8,3 ms; (60 Hz), sine VR = 0 V 1.01 kA t = 10 ms; (50 Hz), sine TVJ = 45C 6.05 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V 5.89 kAs t = 10 ms; (50 Hz), sine TVJ = 150 C 4.37 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25C 4.25 kAs 37 Data according to IEC 60747and per semiconductor unless otherwise specified pF 20171128g VUB145-16NOXT Ratings Brake IGBT + Diode Symbol VCES Definition Conditions min. VGES max. DC gate voltage 20 V VGEM max. transient gate emitter voltage 30 V I C25 collector current TC = 25C 180 A TC = 80 C 140 A 500 W 2.1 V TVJ = collector emitter voltage I C80 TC = 25C Ptot total power dissipation VCE(sat) collector emitter saturation voltage VGE(th) gate emitter threshold voltage I C = 4 mA; VGE = V CE TVJ = 25C I CES collector emitter leakage current VCE = VCES ; V GE = 0 V TVJ = 25C I GES gate emitter leakage current VGE = 20 V Q G(on) total gate charge VCE = 600 V; VGE = 15 V; I C =100 A t d(on) turn-on delay time I C = 100 A; V GE = 15 V TVJ = 25C 1.7 TVJ = 125C 1.9 TVJ = 125C tr current rise time t d(off) turn-off delay time tf current fall time Eon turn-on energy per pulse Eoff turn-off energy per pulse RBSOA reverse bias safe operating area typ. 25C inductive load 6.8 TVJ = 125C VGE = 15 V; R G = 6.8 SCSOA short circuit safe operating area t SC short circuit duration VCEK = 1200 V VCE = 720 V; VGE = 15 V I SC short circuit current RG = 6.8 ; non-repetitive R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink 7.5 V 0.1 mA 0.1 mA nA 340 nC 230 ns 70 ns 380 ns 230 ns 12.5 mJ 11.5 mJ TVJ = 125C VCEK = 1200 V I CM V 500 VCE = 600 V; IC = 100 A VGE = 15 V; R G = 6.8 6 max. Unit 1200 V TVJ = 125C 300 A 10 s A 450 0.25 K/W K/W 0.10 Brake Diode VRRM max. repetitive reverse voltage TVJ = 25C 1200 V I F25 forward current TC = 25C 48 A TC = 80 C 32 A TVJ = 25C 2.75 V TVJ = 25C 0.25 mA TVJ = 125C 1 mA I F80 VF forward voltage I F = 30 A IR reverse current VR = VRRM Q rr reverse recovery charge VR = I RM max. reverse recovery current -di F /dt = 1000 A/s trr reverse recovery time IF = 30 A E rec reverse recovery energy R thJC thermal resistance junction to case RthCH thermal resistance case to heatsink TVJ = 125C IXYS reserves the right to change limits, conditions and dimensions. (c) 2017 IXYS all rights reserved 600 V TVJ = 125C 1.60 V 5.2 C 50 A 300 ns 1.9 mJ 0.9 K/W 0.10 Data according to IEC 60747and per semiconductor unless otherwise specified K/W 20171128g VUB145-16NOXT Package Ratings E2-Pack Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 max. 200 Unit A -40 150 C -40 125 C 125 C 176 Weight MD 3 mounting torque d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL typ. t = 1 minute 6 Nm terminal to terminal 6.0 mm terminal to backside 12.0 mm 3600 V 3000 V t = 1 second isolation voltage g 50/60 Hz, RMS; IISOL 1 mA 2D Data Matrix XXXXXXXXXX yywwx Logo UL Part number Date Code Location Ordering Standard Ordering Number VUB145-16NOXT Marking on Product VUB145-16NOXT Delivery Mode Box Quantity 6 Code No. 521635 105 Temperature Sensor NTC Symbol Definition Conditions R25 resistance TVJ = 25 B25/50 temperature coefficient min. 4.75 typ. 5 3375 max. Unit 5.25 k K 104 R [ ] 103 Equivalent Circuits for Simulation I V0 R0 * on die level Rectifier Brake Diode V 0 max threshold voltage 0.87 1.31 R0 max slope resistance * 3.3 8 IXYS reserves the right to change limits, conditions and dimensions. (c) 2017 IXYS all rights reserved T VJ = 150 C 102 0 V m 25 50 75 100 TC [C] 125 150 Typ. NTC resistance vs. temperature Data according to IEC 60747and per semiconductor unless otherwise specified 20171128g VUB145-16NOXT Outlines E2-Pack D A 17 0,5 20,6 0,5 3,5 0,5 O6 Vor der Montage typ. 100 m konvex uber 75 mm Before mounting typ. 100 m convex over 75 mm O 2,5 -0,3 O 2,1 -0,3 1,5 +0,3 Detail C Detail D 0,8 0,2 15 1 6 Detail A 0,8 0,05 1,2 0,05 93 0,2 24 47 23 15.24 11.43 11,43 0 48 22 49 21 50 4 5 6 7 8 9 7.62 7,62 11,43 11.43 20 10 11 12 13 14 15 16 17 18 19 46,50 50.31 3 31,26 35,07 0 2 19,83 1 C 61,74 65,55 Index 41,90 46 32 0,2 O 5,5 +0,1 - 0,3 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 45 11 45 0,2 65,55 69,36 23,64 27,45 79,2 107,5 0,3 Bemerkung / Note: - Nichttolerierte Mae nach / Measure without tolerances according DIN ISO 2768-T1-m - PCB-Lochmuster / PCB hole pattern: see pin position - Toleranz Pin-Position und PCB-Lochmuster / Tolerance of pin position and PCB hole pattern: - Montageanleitung / Mounting instruction: www.ixys.com Application note IXAN0024 0.1 Detail A: PCB-Montage / Mounting on PCB - Empfohlene, selbstschneidende Schraube / Recommended, self-tapping screw: EJOT PT(R) (Groe / size: K25) - Max. Schraubenlange / Max. screw length: PCB-Dicke / thickness + 6 mm (max. Lochtiefe / hole depth) - Empfohlenes Drehmoment / Recommended mounting torque: 1.5 Nm 24+25 29 30 45+46 NTC ~14+15 ~10+11 ~ 6+7 3 21+22 IXYS reserves the right to change limits, conditions and dimensions. (c) 2017 IXYS all rights reserved 41 40 48+49 Data according to IEC 60747and per semiconductor unless otherwise specified 20171128g VUB145-16NOXT Rectifier 200 10 4 900 TVJ = 125C TVJ = 25C 800 IF IFSM TVJ= 45C TVJ = 45C 150 2 700 It 600 [A s] TVJ= 150C 100 [A] [A] 2 50 TVJ = 150C 500 0 0.0 50Hz, 80% VRRM 0.5 1.0 1.5 400 0.001 2.0 0.01 VF [V] 0.1 10 3 1 1 2 t [s] Fig. 1 Forward current vs. voltage drop per diode 3 4 5 6 7 8 910 t [ms] 2 Fig. 2 Surge overload current vs. time per diode Fig. 3 I t vs. time per diode 140 RthA: 0.1 K/W 0.3 K/W 0.6 K/W 1.0 K/W 1.5 K/W 2.5 K/W DC = 1 0.5 0.4 0.33 0.17 0.08 80 60 Ptot 40 DC = 1 0.5 0.4 0.33 0.17 0.08 120 100 IdAV 80 [A] 60 [W] 40 20 20 0 0 0 10 20 30 40 50 60 70 0 20 40 IF(AV)M [A] 60 80 100 120 140 160 0 25 50 Tamb [C] 75 100 125 150 TC [C] Fig. 4 Power dissipation vs. forward current and ambient temperature per diode Fig. 5 Max. forward current vs. case temperature per diode 0.6 0.5 Constants for ZthJC calculation: 0.4 ZthJC 0.3 [K/W] 0.2 0.1 0.0 1 10 100 1000 i Rth (K/W) ti (s) 1 0.040 0.004 2 0.003 0.010 3 0.140 0.030 4 0.120 0.300 5 0.197 0.080 10000 t [s] Fig. 6 Transient thermal impedance junction to case vs. time per diode IXYS reserves the right to change limits, conditions and dimensions. (c) 2017 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20171128g VUB145-16NOXT Brake IGBT + Diode 200 200 150 13 V VCE = 20 V 150 150 25C IC 200 VGE = 19 V 17 V 15 V IC 125C 100 11 V TVJ = 150C IC 100 100 [A] [A] [A] 125C 50 50 50 25C 9V 0 0.0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 VCE [V] 400 RG = 6.8 Ohm VCE = 600 V VGE = 15 V TVJ = 125C 30 3 Eon tr 20 200 [mJ] [ns] 50 10 RG = 6.8 Ohm VCE = 600 V VGE = 15 V TVJ = 125C Eoff [ns] tf 20 0 200 200 100 Eoff 0 80 RG = 6.8 Ohm VR = 600 V TVJ = 125C I rr 6 40 IF 30 [A] 125C 60 Irr 4 40 [A] [mJ] 100 150 2.5 200 Erec 10 20 30 40 50 0 60 1.5 2.0 2.5 Diode 100 Erec IGBT 1.5 75 [mJ] 1.0 50 ZthJC Irr 0.1 [K/W] [A] 0.5 0 1.0 1 20 Erec 0.5 VF [V] Fig. 6 Typ. forward characteristics Diode 125 TVJ = 125C VR = 600 V IF = 30 A 25C 0 0.0 0 50 Irr 2 10 IC [A] Fig. 5 Typ. turn-off energy & switch. times vs. collector current 2.0 Erec 0 50 400 300 [mJ] IC [A] Fig. 4 Typ. turn-on energy & switch. times vs. collector current 8 13 60 500 t 30 0 150 10 11 12 100 Eon 100 9 Fig. 3 Typ. transfer charact. IGBT t d(off) 10 50 8 20 tr 0 7 VGE [V] Fig.2 Typ. output characteristics IGBT 40 300 td(on) 0 6 4 VCE [V] Fig.1 Output characteristics IGBT 40 2 25 0.0 4 8 12 16 20 0 24 0.01 0.001 IGBT Ri ti 0.050 0.0010 0.035 0.0100 0.120 0.0300 0.045 0.0800 0.01 Diode Ri ti 0.365 0.0050 0.180 0.0003 0.255 0.0397 0.100 0.1000 0.1 1 IF [A] RG [Ohm] t [s] Fig. 7 Typ. reverse recovery characteristics Diode Fig. 8 Typ. reverse recovery characteristics Diode Fig. 9 Transient thermal resistance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2017 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20171128g